The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 01, 2007

Filed:

Dec. 28, 2004
Applicant:

Ralph B Danzl, Tempe, AZ (US);

Inventor:

Ralph B Danzl, Tempe, AZ (US);

Assignee:

Medtronic, Inc., Minneapolis, MN (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Semiconductor structures and methods for fabricating semiconductor structures are provided. The method comprises forming a first insulating layer having a substantially planar surface overlying a first conductive layer of an interconnect stack. A thin film resistor is formed overlying the first insulating layer and a second insulating layer is deposited overlying the first insulating layer and the resistor. A portion of the second insulating layer is removed to form a substantially planar surface. The second insulating layer is anisotropically etched to form a first via to the first conductive layer and a fill material comprising tungsten is deposited within the first via. The second insulating layer is wet etched to form a second via to the thin film resistor and a second conductive layer is deposited overlying the second insulating layer and within the second via.


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