The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2007
Filed:
Jul. 06, 2005
Kazuyuki Ozeki, Ota, JP;
Yuji Goto, Gunma, JP;
Kazuyuki Ozeki, Ota, JP;
Yuji Goto, Gunma, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
When memory cells of EEPROM and a capacitor element are formed on a same semiconductor substrate, the number of processes is prevented from increasing and a manufacturing cost is reduced. Furthermore, reliability of the capacitor element is improved, and characteristics of the memory cells, a MOS transistor, and so on are prevented from changing. A pair of left and right memory cells is formed in a memory cell formation region of a P-type silicon substrate, being symmetrical to each other with respect to a source region, and a capacitor element formed of a lower electrode, a capacitor insulation film, and an upper electrode is formed in a capacitor element formation region of the same P-type silicon substrate. The lower electrode of the capacitor element is formed by patterning a polysilicon film provided for forming control gates of the pair of memory cells.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile