The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 01, 2007

Filed:

Mar. 17, 2003
Applicants:

I-wei Chen, Swarthmore, PA (US);

Alexander Mamchik, Philadelphia, PA (US);

Inventors:

I-Wei Chen, Swarthmore, PA (US);

Alexander Mamchik, Philadelphia, PA (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11B 5/39 (2006.01); H01L 43/00 (2006.01); H01L 39/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are new compositions of ruthenates in the pervoskite and layered pervoskite family, wherein the ruthenate compositions exhibit large magnetoresistance (MR) and electric-pulse-induced resistance (EPIR) switching effects, the latter observable at room temperature. This is the first time large MR and EPIR effects have been shown together in ruthenate compositions. Further provided are methods for synthesizing the class of ruthenates that exhibits such properties, as well as methods of use therefor in electromagnetic devices, thin films, sensors, semiconductors, insulators and the like.


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