The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 01, 2007

Filed:

Dec. 08, 2003
Applicants:

Peidong Yang, Berkeley, CA (US);

Rongrui He, Berkeley, CA (US);

Joshua Goldberger, Berkeley, CA (US);

Rong Fan, El Cerrito, CA (US);

Yi-ying Wu, Albany, CA (US);

Deyu LI, Albany, CA (US);

Arun Majumdar, Orinda, CA (US);

Inventors:

Peidong Yang, Berkeley, CA (US);

Rongrui He, Berkeley, CA (US);

Joshua Goldberger, Berkeley, CA (US);

Rong Fan, El Cerrito, CA (US);

Yi-Ying Wu, Albany, CA (US);

Deyu Li, Albany, CA (US);

Arun Majumdar, Orinda, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 23/00 (2006.01); C30B 25/00 (2006.01); C30B 28/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of fabricating uniform nanotubes are described in which nanotubes were synthesized as sheaths over nanowire templates, such as using a chemical vapor deposition process. For example, single-crystalline zinc oxide (ZnO) nanowires are utilized as templates over which gallium nitride (GaN) is epitaxially grown. The ZnO templates are then removed, such as by thermal reduction and evaporation. The completed single-crystalline GaN nanotubes preferably have inner diameters ranging from 30 nm to 200 nm, and wall thicknesses between 5 and 50 nm. Transmission electron microscopy studies show that the resultant nanotubes are single-crystalline with a wurtzite structure, and are oriented along the <001> direction. The present invention exemplifies single-crystalline nanotubes of materials with a non-layered crystal structure. Similar 'epitaxial-casting' approaches could be used to produce arrays and single-crystalline nanotubes of other solid materials and semiconductors. Furthermore, the fabrication of multi-sheath nanotubes are described as well as nanotubes having multiple longitudinal segments.


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