The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Mar. 11, 2003
Hector Torres, McKinney, TX (US);
Mark W. Morgan, Allen, TX (US);
Julie Hwang, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A high-speed front-multiplexed multi-channel LVDS-compatible repeater circuit that limits input leakage current levels in the event one or more input voltages of the circuit exceeds the supply voltage. The LVDS repeater includes a multiplexor having a plurality of differential inputs and at least one differential output. The multiplexor includes a plurality of transmission gates to allow any one of the differential inputs to be routed to any differential output. Each transmission gate includes a first PMOS transistor and an NMOS transistor. The multiplexor further includes first Schottky diodes coupled between Vcc and the back-gate nodes of the first PMOS transistors, and second PMOS transistors coupled as shunts between the gate nodes of the first PMOS transistors and the source nodes of the NMOS transistors. The first Schottky diodes block the back-gate diode-to-Vcc leakage current paths and the second PMOS transistors block the leakage current paths from the differential inputs to the first PMOS transistors when the input voltage exceeds Vcc.