The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2007

Filed:

Mar. 18, 2005
Applicant:

Seiichiro Tamai, Osaka, JP;

Inventor:

Seiichiro Tamai, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A photo-detecting device that enables a solid-state image sensor to meet the requirement of higher quality imaging including: a first silicon substratehaving p- and n-type regions; a first SOI substratein which a second silicon substratehaving p- and n-type regions is formed on a first SOI insulation layerand a second SOI substratein which a third silicon substratehaving p- and n-type regions is formed on a second SOI insulation layerEach pn-junction of the first silicon substratethe second silicon substrateand the third silicon substrateforms a photodiode for converting incident light into electric charges. The depth of each pn-junction, which is measured from the surface of the second SOI substrateirradiated with the light, is determined according to absorption length of light to be converted into electric charges.


Find Patent Forward Citations

Tamai, Seiichiro. (2007). Photo-detecting device (U.S. Patent No. 7208811). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7208811

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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