The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Sep. 11, 2000
Makoto Inai, Omihachiman, JP;
Hidehiko Sasaki, Moriyama, JP;
Makoto Inai, Omihachiman, JP;
Hidehiko Sasaki, Moriyama, JP;
Murata Manufacturing Co., Ltd., Kyoto, JP;
Abstract
The field-effect semiconductor device includes a channel layer; a contact layer; a semiconductor structure having an electron-affinity different from those of the channel layer and the contact layer and formed between the channel layer and the contact layer; an ohmic electrode formed on the contact layer; and a Schottky electrode formed on the semiconductor structure. The junction face between the channel layer and the semiconductor structure and the junction face between the contact layer and the semiconductor structure are iso-type heterojunctions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile