The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Feb. 24, 2006
Ming Yang, Silver Spring, MD (US);
Chia-hung Yang, Silver Spring, MD (US);
Yuli Lyanda-geller, West Lafayette, IN (US);
Ming Yang, Silver Spring, MD (US);
Chia-Hung Yang, Silver Spring, MD (US);
Yuli Lyanda-Geller, West Lafayette, IN (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A transistor having a bottom dielectric layer, a first layer, a second layer, a top dielectric layer, and a gate electrode. The first layer and the second layer form a composite quantum well between the bottom dielectric layer and the top dielectric layer. The first layer, the second layer, and the top dielectric layer are configured to form a hole wire in the first layer. The gate electrode is over a portion of the hole wire and divides the top dielectric layer into a source contact and a drain contact.