The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Jul. 29, 2003
Richard Syms, London, GB;
Richard Syms, London, GB;
Microsaic Systems Limited, London, GB;
Abstract
A method of constructing a micro-engineered mass spectrometer from bonded silicon-on-insulator (BSOI) wafers is described with reference to a quadrupole spectrometer. The quadrupole geometry is achieved using two BSOI wafers (), which are bonded together to form a monolithic block (). Deep etched features and springs formed in the outer silicon layers are used to locate cylindrical metallic electrode rods (). The precision of the assembly is determined by a combination of lithography and deep etching, and by the mechanical definition of the bonded silicon layers. Deep etched features formed in the inner silicon layers are used to define ion entrance and ion collection optics. Other features such as fluidic channels may be incorporated.