The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Apr. 11, 2005
Applicants:
Zia Hossain, Tempe, AZ (US);
Mohamed Imam, Tempe, AZ (US);
Joe Fulton, Chandler, AZ (US);
Inventors:
Assignee:
Semiconductor Components Industries, L.L.C., Phoenix, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract
A structure for making a LDMOS transistor () includes an interdigitated source finger () and a drain finger () on a substrate (). Termination regions () are formed at the tips of the source finger and drain finger. A drain () of a second conductivity type is formed in the substrate of a first conductivity type. A field reduction region () of a second conductivity type is formed in the drain and is wrapped around the termination regions for controlling the depletion at the tip and providing higher voltage breakdown of the transistor.