The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Nov. 29, 2004
Ramesh Venugopal, Richardson, TX (US);
Christoph Wasshuber, Parker, TX (US);
Ramesh Venugopal, Richardson, TX (US);
Christoph Wasshuber, Parker, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for multiplying the pitch of a semiconductor device is disclosed. The method includes forming a patterned mask layer on a first layer, where the patterned mask layer has a first line width. The first layer can then be etched to form a first plurality of sloped sidewalls. After removing a portion of the patterned mask so that the patterned mask layer has a second line width less than the first line width, the first layer can be etched again to form a second plurality of sloped sidewalls. The patterned mask layer can then be removed. The first layer can be etched again to form a third plurality of sloped sidewalls. The first plurality of sloped sidewalls, the second plurality of sloped sidewalls, and the third plurality of sloped sidewalls can form an array of parallel triangular channels.