The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Jun. 23, 2004
Damien Lenoble, Gieres, FR;
Damien Lenoble, Gieres, FR;
STMicroelectronics, S.A., , FR;
Abstract
A method for forming, by thermal oxidation, a silicon oxide layer on an integrated circuit including three-dimensional silicon patterns, includes implanting a first element according to a first angle with respect to a horizontal direction. The first element is electrically neutral and has a first effect on the growth rate of a thermal oxide on silicon. A second element is implanted according to a second angle with respect to the horizontal direction. The second element is electrically neutral and has a second effect complementary to the first effect on the growth rate of a thermal oxide on silicon. The second angle is distinct from the first angle, and one of the first and second angles is a right angled. The silicon is thermally oxidized.