The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Oct. 19, 2004
Toru Kurosaki, Saitama, JP;
Hiroaki Shishido, Saitama, JP;
Mizue Kitada, Saitama, JP;
Shinji Kunori, Saitama, JP;
Kosuke Ohshima, Saitama, JP;
Toru Kurosaki, Saitama, JP;
Hiroaki Shishido, Saitama, JP;
Mizue Kitada, Saitama, JP;
Shinji Kunori, Saitama, JP;
Kosuke Ohshima, Saitama, JP;
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Abstract
A technique for improving a ruggedness of a transistor against breakdown is provided. In a transistor of the present invention, a height of filling regions is higher than that of buried regions, so that a withstanding voltage of the filling regions is higher than that of the buried regions. Therefore, since avalanche breakdown occurs in an active region, causing an avalanche breakdown current to flow through the active region having a large area, current concentration does not occur. As a result, a ruggedness of an element against breakdown is increased.