The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Jan. 19, 2005
Sheng Teng Hsu, Camas, WA (US);
Fengyan Zhang, Vancouver, WA (US);
Gregory M. Stecker, Vancouver, WA (US);
Robert A. Barrowcliff, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Fengyan Zhang, Vancouver, WA (US);
Gregory M. Stecker, Vancouver, WA (US);
Robert A. Barrowcliff, Vancouver, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A non-volatile memory resistor cell with a nanotip electrode, and corresponding fabrication method are provided. The method comprises: forming a first electrode with nanotips; forming a memory resistor material adjacent the nanotips; and, forming a second electrode adjacent the memory resistor material, where the memory resistor material is interposed between the first and second electrodes. Typically, the nanotips are iridium oxide (IrOx) and have a tip base size of about 50 nanometers, or less, a tip height in the range of 5 to 50 nm, and a nanotip density of greater than 100 nanotips per square micrometer. In one aspect, the substrate material can be silicon, silicon oxide, silicon nitride, or a noble metal. A metalorganic chemical vapor deposition (MOCVD) process is used to deposit Ir. The IrOx nanotips are grown from the deposited Ir.