The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Mar. 26, 2002
Tetsuro Asano, Oizumi-machi, JP;
Toshikazu Hirai, Oizumi-machi, JP;
Tetsuro Asano, Oizumi-machi, JP;
Toshikazu Hirai, Oizumi-machi, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A semiconductor switching device includes two FETs with different device characteristics, a common input terminal, and two output terminals. The gate width of each FET is about 400 μm, and the maximum power required for the device operation is maintained by a lager conductivity of the channel layer of one FET and by a lower conductivity of the channel layer of another FET. The device operates at frequencies of 2.4 GHz or higher without use of shunt FET.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile