The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Oct. 03, 2005
Vinh Chung, Lake Forest Park, WA (US);
Jonathan Chan Mallari, Bothell, WA (US);
Vinh Chung, Lake Forest Park, WA (US);
Jonathan Chan Mallari, Bothell, WA (US);
Neah Power Systems, Inc., Bothell, WA (US);
Abstract
The disclosed invention relates to masked silicon structures and methods for making porous silicon in selected areas of a silicon substrate via anodic etching. The masked silicon structures comprise: (1) a frontside barrier layer; and (2) a backside opaque ohmic contact layer. The frontside barrier layer includes a plurality of discrete barrier openings bounded by a contiguous frontside portion of the barrier layer, thereby defining a first aperture having a first shape and a first center point. The backside opaque ohmic contact layer includes a second aperture bounded by a contiguous backside portion of the ohmic contact layer, thereby defining a second aperture having a second shape and a second center point. The first and second center points share a perpendicular axis. The first shape is substantially the same as the second shape but slightly larger, and is trans-concentrically positioned relative to the second shape about the shared axis.