The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Dec. 22, 2005
Emmanuel Saucedo-flores, Zapopan, MX;
Emmanuel Saucedo-Flores, Zapopan, MX;
Semiconductor Components Industries, L.L.C., Phoenix, AZ (US);
Abstract
A thyristor and a method for manufacturing the thyristor that includes providing a semiconductor substrate that has first and second major surfaces. A first doped region is formed in the semiconductor substrate, wherein the first doped extends from the first major surface into the semiconductor substrate. The first doped region has a vertical boundary that has a notched portion. A second doped region is formed in first doped region, wherein the second doped region extends from the first major surface into the first doped region. A third doped region is formed in the semiconductor substrate, wherein the third doped region extends from the second major surface into the semiconductor substrate.