The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Oct. 24, 2003
Method and apparatus for in situ depositing of neutral cs under ultra-high vacuum to analytical ends
Applicants:
Henri Noel Migeon, Tuntange, LU;
Tom Wirtz, Grevenmacher, LU;
Inventors:
Henri Noel Migeon, Tuntange, LU;
Tom Wirtz, Grevenmacher, LU;
Assignee:
Centre de Recherche Public-Gabriel Lippmann, Belvaux, LU;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 49/00 (2006.01); H01J 37/305 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention relates to a method for modifying the electronic properties of a surface to analytical ends, such as SIMS or electron spectroscopy, characterised in that it comprises in situ deposition of pure neutral cesium (Cs), under ultra-high vacuum, said neutral cesium being enabled in the form of a collimated adjustable stream. The invention relates also to the special column designed for implementing the method and to the corresponding energy and/or mass analyser instrument.