The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Jun. 29, 2004
Applicant:
Choon Kun Ryu, Seoul, KR;
Inventor:
Choon Kun Ryu, Seoul, KR;
Assignee:
Hynix Semiconductor Inc., Kyungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention relates to a method for forming an insulating layer in a semiconductor device. After a first oxide film is formed in a trench, an impurity remaining on the first oxide film in the process of etching the first oxide film using a gas containing fluorine is stripped using oxygen plasma or hydrogen plasma. Thus, it can prevent degradation of device properties due to diffusion of the impurity without additional equipment. Therefore, it can help improve reliability of a next-generation device.