The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Dec. 10, 2003
Chang-min Park, Seoul, KR;
Jung-hyeon Lee, Suwon, KR;
Han-ku Cho, Seongnam, KR;
Joon-soo Park, Gwacheon, KR;
Chang-min Park, Seoul, KR;
Jung-hyeon Lee, Suwon, KR;
Han-ku Cho, Seongnam, KR;
Joon-soo Park, Gwacheon, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
Methods for manufacturing semiconductor devices with contact bodies extended in a direction of a bit line to increase the contact area between a contact body and a storage electrode is provided. In one aspect a method includes forming gate lines on a semiconductor substrate, forming a first insulating layer to cover the gate lines, forming first contact pads and second contact pads, which are electrically connected to the semiconductor substrate between the gate lines, by penetrating the first insulating layer. Further, a second insulating layer is formed to cover the first contact pads and the second contact pads, and bit lines are formed across over the gate lines and are electrically connected to the second contact pads by penetrating the second insulating layer. In addition, a third insulating layer is formed to cover the bit lines and is selectively etched to form a band-type opening that crosses the bit lines and exposes the first contact pads.