The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2007

Filed:

Jul. 05, 2005
Applicants:

Andrew Deering, Swanton, VT (US);

Terence L. Kane, Port Chester, NY (US);

Philip V. Kaszuba, Essex Junction, VT (US);

Leon Moszkowicz, Milton, VT (US);

Carmelo F. Scrudato, Ossining, NY (US);

Michael Tenney, Poughkeepsie, NY (US);

Inventors:

Andrew Deering, Swanton, VT (US);

Terence L. Kane, Port Chester, NY (US);

Philip V. Kaszuba, Essex Junction, VT (US);

Leon Moszkowicz, Milton, VT (US);

Carmelo F. Scrudato, Ossining, NY (US);

Michael Tenney, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01); C23F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Apparatus for exposure and probing of features in a semiconductor workpiece includes a hollow concentrator for covering a portion of the workpiece connected by a gas conduit to a supply of etchant gas. A stage supports and positions the semiconductor workpiece. Control means moves the stage and the semiconductor workpiece to the series of positions sequentially. An energy beam source directs a focused energy beam through an aperture through the concentrator onto a region on the surface of the workpiece in the presence of the etchant gas. The control means moves the stage to a series of positions with respect to the concentrator and the energy beam to direct the energy beam in the presence of the etchant gas to expose a series of regions on the surface of the semiconductor workpiece positioned below the hollow interior space of the concentrator, sequentially.


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