The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2007

Filed:

Dec. 15, 2003
Applicants:

Grant W. Mcewan, Austin, TX (US);

Scott C. Bolton, Austin, TX (US);

Barry T. Haygood, Austin, TX (US);

Inventors:

Grant W. McEwan, Austin, TX (US);

Scott C. Bolton, Austin, TX (US);

Barry T. Haygood, Austin, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor process exposes metal in anticipation of an additional processing step that includes a deposition of a layer. Between the two processing steps, the exposed metal is exposed to ambient conditions that may include humidity. The effect of the humidity is potentially to cause corrosion of the exposed metal causing a yield loss. In order to withstand the various time periods that may occur between processing steps, an inhibitor is applied to the exposed surface causing the formation of a very thin protective layer on the exposed metal, which greatly inhibits corrosion. This thin protective layer does not cause any problems with the subsequent step because the typical following steps all, by their very nature, remove the protective layer. Thus, the time period between the processing step that exposes the metal and the next step is no longer critical due to the protective layer.


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