The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Nov. 07, 2003
Sergey Lopatin, Santa Clara, CA (US);
Arulkumar Shanmugasundram, Sunnyvale, CA (US);
Dmitry Lubomirsky, Cupertino, CA (US);
Ian A. Pancham, San Francisco, CA (US);
Sergey Lopatin, Santa Clara, CA (US);
Arulkumar Shanmugasundram, Sunnyvale, CA (US);
Dmitry Lubomirsky, Cupertino, CA (US);
Ian A. Pancham, San Francisco, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for fabricating a capping layer with enhanced barrier resistance to both copper and oxygen diffusion, comprises forming a capping layer on a conductive surface of an interconnect, wherein the capping layer comprises cobalt (Co), tungsten (W), rhenium (Re), and at least one of phosphorus (P) and boron (B). In an embodiment of the invention, forming the capping layer comprises exposing the conductive surface to an electroless capping solution comprising a cobalt source, a tungsten source, a rhenium source, and at least one of a phosphorus source and a boron source, and annealing the capping layer.