The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Jun. 28, 2005
Applicants:
Shin-tai Lo, Miaoli County, TW;
Yi-chin Lin, Taichung, TW;
Ruey-shing Weng, Kaohsiung, TW;
Inventors:
Assignee:
Wintek Corporation, Taichung, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 19/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A high-stability shift circuit using amorphous silicon thin film transistors, which utilizes two out-of-phase pulses to control the operating mechanism and the bias-relations among transistors in the shift circuit. This makes the transistors under the driving conditions of positive/negative-alternating biases so as to restrain the voltage shift of the transistors such that the threshold voltage will not excessively increase along with the increasing operating time. This can not only increase the lifetime of the amorphous silicon thin film transistors but also extend the operating time of the shift circuit.