The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Jun. 25, 2004
Francois Jacquet, Froges, FR;
Philippe Candellier, Saint Mury, FR;
Robin Cerutti, Grenoble, FR;
Philippe Coronel, Beauregard, FR;
Pascale Mazoyer, Domene, FR;
Francois Jacquet, Froges, FR;
Philippe Candellier, Saint Mury, FR;
Robin Cerutti, Grenoble, FR;
Philippe Coronel, Beauregard, FR;
Pascale Mazoyer, Domene, FR;
STMicroelectronics S.A., Montrouge, FR;
Abstract
An integrated dynamic random access memory element includes two cells for the storage of two respective bits. A source region and a drain region are included. Each cell comprises a field-effect transistor having a gate and an intermediate portion which extend between the source and drain regions. A channel is provided in the intermediate portion of the transistor for each cell. A polarization electrode is placed between the respective intermediate portions of the two transistors. This polarization electrode is capacitively coupled to the intermediate portion of each transistor and is used to store the first and second bits.