The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Aug. 30, 2005
Applicants:
Hidenori Takeda, Nara, JP;
Toshiharu Tambo, Kyoto, JP;
Inventors:
Hidenori Takeda, Nara, JP;
Toshiharu Tambo, Kyoto, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/072 (2006.01);
U.S. Cl.
CPC ...
Abstract
In the method for manufacturing a heterojunction bipolar transistor, a collector contact layer, a collector layer, a base layer, a base protection layer, an emitter layer, an emitter contact layer, and a WSi layer are sequentially formed on a substrate. A resist pattern is then formed on the WSi layer, and the WSi layer is patterned by using the resist pattern as a mask. Thereafter, the emitter contact layer and the emitter layer are sequentially removed by ICP (Inductively Coupled Plasma) dry etching by using the resist pattern as a mask.