The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Aug. 23, 2004
Youichi Nagai, Itami, JP;
Makoto Kiyama, Itami, JP;
Takao Nakamura, Itami, JP;
Takashi Sakurada, Itami, JP;
Katsushi Akita, Itami, JP;
Koji Uematsu, Itami, JP;
Ayako Ikeda, Itami, JP;
Koji Katayama, Itami, JP;
Susumu Yoshimoto, Itami, JP;
Youichi Nagai, Itami, JP;
Makoto Kiyama, Itami, JP;
Takao Nakamura, Itami, JP;
Takashi Sakurada, Itami, JP;
Katsushi Akita, Itami, JP;
Koji Uematsu, Itami, JP;
Ayako Ikeda, Itami, JP;
Koji Katayama, Itami, JP;
Susumu Yoshimoto, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.