The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Nov. 29, 2005
Yasutoshi Okuno, Kyoto, JP;
Michikazu Matsumoto, Kyoto, JP;
Yasutoshi Okuno, Kyoto, JP;
Michikazu Matsumoto, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor device includes: a gate electrode formed on a silicon substrate; source/drain regions formed at both sides of the gate electrode in the silicon substrate; and a silicide layer formed on the source/drain regions. The silicide layer includes a first silicide layer mainly made of a metal silicide having a formation enthalpy lower than that of NiSi and a second silicide layer formed on the first silicide and made of Ni silicide.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile