The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Jun. 24, 2005
Applicants:
Takashi Whitney Orimoto, Mountain View, CA (US);
Harpreet K. Sachar, Milpitas, CA (US);
Inventors:
Takashi Whitney Orimoto, Mountain View, CA (US);
Harpreet K. Sachar, Milpitas, CA (US);
Assignees:
Spansion LLC, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a memory device includes forming a memory stack on a substrate. The memory stack includes an alumina layer acting as an intergate dielectric layer. A transistor is formed on the substrate in an area separate from the memory stack. The transistor is formed to include thin gate oxide via a dry oxidation technique and a gate layer on the thin gate oxide. The thin gate oxide is formed without subjecting the thin gate oxide to thermal annealing with NO.