The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 10, 2007

Filed:

Jan. 07, 2004
Applicants:

Akihiko Tsuzumitani, Niigata, JP;

Yasutoshi Okuno, Kyoto, JP;

Inventors:

Akihiko Tsuzumitani, Niigata, JP;

Yasutoshi Okuno, Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A measurement substratein which a silicon oxide film, a polysilicon layerand a titanium silicide layerare formed over a silicon substratein this order is prepared. The measurement substrateis irradiated with X-rays so that the proportions of three types of silicides with different compositions in the titanium silicide layerare measured based on the intensity of hard X-rays emitted from oxygen in the silicon oxide filmand the intensity of hard X-rays emitted from titanium in the titanium silicide layer


Find Patent Forward Citations

Tsuzumitani, Akihiko. (2007). Method for measuring silicide proportion, method for measuring annealing temperature, method for fabricating semiconductor device and x-ray photo receiver (U.S. Patent No. 7202095). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7202095

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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