The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Jul. 08, 2004
Michael Heckmeier, Hemsbach, DE;
Brigitte Schuler, Gross-Ostheim, DE;
Izumi Saito, Darmstadt, DE;
Volker Reiffenrath, Rossdorf, DE;
Georg Luessem, Ober-Ramstadt, DE;
Christian Hock, Mainaschaff, DE;
Michael Heckmeier, Hemsbach, DE;
Brigitte Schuler, Gross-Ostheim, DE;
Izumi Saito, Darmstadt, DE;
Volker Reiffenrath, Rossdorf, DE;
Georg Luessem, Ober-Ramstadt, DE;
Christian Hock, Mainaschaff, DE;
Merck Patent GmbH, Darmstadt, DE;
Abstract
Described are media for liquid-crystal applications where the media include a mixture of polar compounds of positive dielectric anisotropy. The mixtures include one or more compounds of the formula I in which: Ris a halogenated or unsubstituted alkyl or alkoxy radical having from 1 to 15 carbon atoms, where one or more CHgroups in these radicals are optionally, independently of one another, replaced by —C≡C—, —CH═CH—, —O—, —CO—O—or —O—CO— in such a way that O atoms are not linked directly to one another; X is F, Cl, CN, a halogenated alkyl radical, a halogenated alkenyl radical, a halogenated alkoxy radical or a halogenated alkenyloxy radical having 1 to 6 carbon atoms; and Land Lare each, independently of one another, H or F. It being provided that the media exhibit a TN threshold of below 1.3V.