The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2007
Filed:
Oct. 04, 2004
Sung-jae Jung, Seoul, KR;
Hoon-tae Kim, Yongin-si, KR;
Yun-seong Eo, Suwon-si, KR;
Kwang-du Lee, Suwon-si, KR;
Sang-yoon Jeon, Seoul, KR;
Sung-jae Jung, Seoul, KR;
Hoon-tae Kim, Yongin-si, KR;
Yun-seong Eo, Suwon-si, KR;
Kwang-du Lee, Suwon-si, KR;
Sang-yoon Jeon, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A dual gate cascade amplifier includes a first transistor and a second transistor electrically connected in series, the second transistor including a first parallel transistor and a second parallel transistor, the first parallel transistor and the second parallel transistor being electrically connected in parallel, a first channel electrically connecting a first end channel region of the first transistor and a second end channel region, wherein one of the first or second end channel regions is a source and the other of the first or second end channel regions is a drain, the second end channel region being a common end channel region shared by the first and second parallel transistors, and a second channel electrically connected to the second end channel region and extending away from the first transistor.