The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7199636 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 03, 2007

Filed:

Mar. 31, 2005
Applicants:

Richard K. Oswald, San Jose, CA (US);

Tamotsu Yamamoto, Cupertino, CA (US);

Takashi Ryu, Kyoto, JP;

Hideki Shirokoshi, Kyoto, JP;

Inventors:

Richard K. Oswald, San Jose, CA (US);

Tamotsu Yamamoto, Cupertino, CA (US);

Takashi Ryu, Kyoto, JP;

Hideki Shirokoshi, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03L 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An active diode including a NMOS transistor having a source terminal, a drain terminal, a gate terminal and a back gate terminal, where the source terminal is connected to the back gate terminal and forms the anode terminal of the active diode, and the drain terminal forms the cathode terminal of the active diode. The active diode further includes an offset bias voltage source having a first terminal and a second terminal; and an amplifier having a non-inverting input terminal and an inverting input terminal, and an output terminal, where the inverting input terminal is connected to the drain terminal of the transistor, the non-inverting input terminal is connected to the first terminal of the offset bias source, the output terminal is connected to the gate terminal of the transistor, and the second terminal of the offset bias source is connected to the source terminal of the transistor.


Find Patent Forward Citations

Loading…