The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2007
Filed:
Oct. 09, 2003
Applicant:
Alan Elbanhawy, Hollister, CA (US);
Inventor:
Alan Elbanhawy, Hollister, CA (US);
Assignee:
Fairchild Semiconductor Corporation, South Portland, ME (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); G01R 31/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
Semiconductor devices containing a MOSFET and an on-chip current sensor in the form of a magnetic resistive element are described. The magnetic resistive element (MRE) is proximate the MOSFET in the semiconductor device. The current flowing through the MOSFET generates a magnetic field that is detected by the MRE. The MRE comprises a metal film that is placed proximate the MOSFET during the normal fabrication processes, thereby adding little to the manufacturing complexity or cost. Using the MRE adds an accurate, effective, and cheap method to measure currents in MOSFET devices.