The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7199391 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 03, 2007

Filed:

May. 12, 2004
Applicants:

Nick Holonyak, Jr., Urbana, IL (US);

Russell Dupuis, Austin, TX (US);

Inventors:

Nick Holonyak, Jr., Urbana, IL (US);

Russell Dupuis, Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a layer of quantum dots disposed between adjacent layers of the device; and providing an auxiliary layer disposed in one of the adjacent layers, and spaced from the layer of quantum dots, the auxiliary layer being operative to communicate carriers with the layer of quantum dots.


Find Patent Forward Citations

Holonyak, Jr., Nick. (2007). Device with quantum dot layer spaced from delta doped layer (U.S. Patent No. 7199391). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7199391

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…