The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2007

Filed:

Aug. 20, 2003
Applicants:

Seong-hwoon Kim, Ocoee, FL (US);

Richard A. Leblanc, Clermont, FL (US);

Lee A. Mirth, Orlando, FL (US);

Inventors:

Seong-Hwoon Kim, Ocoee, FL (US);

Richard A. Leblanc, Clermont, FL (US);

Lee A. Mirth, Orlando, FL (US);

Assignee:

Lockheed Martin Corporation, Bethesda, MD (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 7/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

An antenna-coupled microbolometer multilayer structure, and associated method of forming an antenna-coupled microbolometer multilayer structure are disclosed, where the structure includes a dielectric layer of dielectric material having at least one locally doped region doped with a dopant to provide a thermal conductive path from a first side to a second side of the dielectric layer. The structure includes an antenna on the first side of the dielectric layer coupled to the locally doped region; a read-out integrated circuit (ROIC) on the second side of the dielectric layer coupled to the locally doped region; a conductive substrate between the dielectric layer and the ROIC; and an electrical connection between the locally doped region and the ROIC, wherein the ROIC is connected to detect, via the electrical connection, a change in electrical resistivity of the locally doped region due to thermal energy absorbed from the antenna.


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