The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2007
Filed:
Oct. 03, 2003
Applicant:
Ching-wei Lin, Taoyuan City, Taoyuan County, 330, TW;
Inventor:
Ching-Wei Lin, Taoyuan City, Taoyuan County, 330, TW;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process for passivating polysilicon and a process for fabricating a polysilicon thin film transistor. A polysilicon layer is formed. Next, high-pressure annealing is performed using a fluorine-containing gas, a chlorine-containing gas, an oxygen-containing gas, a nitrogen-containing gas, or mixtures thereof to passivate the polysilicon layer.
Lin, Ching-Wei. (2007). Process for passivating polysilicon and process for fabricating polysilicon thin film transistor (U.S. Patent No. 7199063). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7199063
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile