The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2007
Filed:
Nov. 19, 2002
Maria Del Rocio Martin Lopez, Reutlingen, DE;
Richard Spitz, Reutlingen, DE;
Alfred Goerlach, Kusterdingen, DE;
Barbara Will, Harrenberg, DE;
Maria Del Rocio Martin Lopez, Reutlingen, DE;
Richard Spitz, Reutlingen, DE;
Alfred Goerlach, Kusterdingen, DE;
Barbara Will, Harrenberg, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A semiconductor system having a pn transition and a method for manufacturing a semiconductor system are disclosed. The semiconductor system is designed in the form of a chip having an edge region, the semiconductor system includes a first layer of a first conductivity type and a second layer of a second conductivity type, which is of opposite polarity to the first conductivity type. The first layer has an edge region and a center region, the pn transition being provided between the first layer and the second layer. The second layer is more weakly doped in its edge region than in its center region, and the boundary surface of the pn transition at the edge region is non-parallel to the main chip plane.