The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2007
Filed:
Dec. 03, 2004
Ji-soon Park, Suwon-si, KR;
Hyun-seok Lim, Suwon-si, KR;
Eung-joon Lee, Yongin-si, KR;
Jung-wook Kim, Suwon-si, KR;
Ji-Soon Park, Suwon-si, KR;
Hyun-Seok Lim, Suwon-si, KR;
Eung-Joon Lee, Yongin-si, KR;
Jung-Wook Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method for forming a tungsten contact plug of a semiconductor device including depositing an insulating layer on a semiconductor substrate, etching the insulating layer to form a contact hole, which exposes a conductive region, forming a barrier layer on the semiconductor substrate having the contact hole, changing characteristics of a portion of the barrier layer on the insulating layer and the portion of the barrier layer in the contact hold such that the characteristics between the barrier layer on the insulating layer and the barrier layer in the contact hole differ, depositing a tungsten layer for forming the tungsten contact plug, on the barrier layer, and removing the tungsten layer from the upper portion of the insulating layer to planarize the semiconductor device.