The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2007
Filed:
Dec. 08, 2003
Applicants:
Erwin A. Hijzen, Blanden, BE;
Raymond J. E. Hueting, Helmond, NL;
Michael A. A. In't Zandt, Veldhoven, NL;
Inventors:
Erwin A. Hijzen, Blanden, BE;
Raymond J. E. Hueting, Helmond, NL;
Michael A. A. In't Zandt, Veldhoven, NL;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/3205 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of making a trench MOSFET includes forming a nitride lineron the sidewallsof a trench and a plug of doped polysiliconat the bottom of a trench. The plug of polysiliconmay then be oxidised to form a thick oxide plugat the bottom of the trench whilst the nitride linerprotects the sidewallsfrom oxidation. This forms a thick oxide plug at the bottom of the trench thereby reducing capacitance between gate and drain.