The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
May. 25, 2005
Eric B. Takeuchi, San Diego, CA (US);
David E. Hargis, San Diego, CA (US);
Eric B. Takeuchi, San Diego, CA (US);
David E. Hargis, San Diego, CA (US);
Melles Griot, Inc., Carlsbad, CA (US);
Abstract
A diode-pumped solid-state laser including a short wavelength (e.g., blue, violet, or UV) semiconductor laser that pumps an absorption transition in a rare-earth-doped material. Responsive to this pumping, the rare-earth active ion directly emits laser radiation. A number of different wavelength outputs, including short wavelengths, are achievable dependent upon the material and the pump wavelength. The gain medium may include an active ion selected from ErSm, Eu, Tb, Dy, Tm, Ho, and Pr. A laser diode pump source has a wavelength in the range of about 365 nm to 480 nm to excite a laser emission in the range of 370 to 800 nm. The laser diode pump source may comprise a GaN-based semiconductor. In some embodiments, the laser diode pump source supplies a pump beam in a range of 370–380 nm, 400–415 nm, 435–445 nm, or 468–478 nm.