The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
Jul. 21, 2004
Sun-lyeong Hwang, Suwon-si, KR;
Sun-Lyeong Hwang, Suwon-si, KR;
Samsung Electronics Co, Ltd., Gyeonggi-Do, KR;
Abstract
The width of a current pass region of a semiconductor laser device is narrowed as much as possible, thus implementing a stable single transverse mode. The device is relatively resistant against physical impact. The device includes a semiconductor substrate having first and second opposite surfaces, and, in order, a first conductive type clad, active layer, etch stop layer, current blocking layer formed in a V-groove shape so that a part of the etch stop layer is exposed, second conductive type clad formed entirely over the entire of the V-groove and the current blocking layer, optical guide layer, current pass facilitation layer, cap layer, second conductive type electrode, and a first conductive type electrode formed on the second surface of the semiconductor substrate.