The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
Mar. 03, 2005
Tetsuo Ueda, Ibaraki, JP;
Masahiro Kume, Otsu, JP;
Toshiya Kawata, Okayama, JP;
Isao Kidoguchi, Kawanishi, JP;
Tetsuo Ueda, Ibaraki, JP;
Masahiro Kume, Otsu, JP;
Toshiya Kawata, Okayama, JP;
Isao Kidoguchi, Kawanishi, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
In a semiconductor laser, a current blocking layercovers a p-type 2cladding layerand a p-type cap layerthat extend in a lengthwise direction of an optical resonator, at both a light-emission end and an end opposite the light-emission end, to thus form non-current injection regions in an optical waveguide. By making current blocking layerat the light-emission end large enough that carriers flowing from a current injection region do not reach the light-emission end surface, the light intensity distribution in the near field at the light-emission end surface is strongly concentrated, allowing the horizontal divergence angle of an emerging laser beam to be enlarged. This structure makes it possible to enlarge the horizontal divergence angle independently after having optimized the thickness of cladding layers and the size of the current injection region.