The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2007

Filed:

Jun. 24, 2005
Applicants:

Ko Takemura, Kyoto, JP;

Kenji Otani, Kyoto, JP;

Inventors:

Ko Takemura, Kyoto, JP;

Kenji Otani, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/00 (2006.01); H01L 23/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a semiconductor integrated circuit device is provided. The device includes a protection circuit that connects to a terminal and has a protection diode and a current mirror circuit. The current mirror circuit includes first and second transistors having bases thereof connected together and emitters thereof connected together, so that emitters are connected to an anode of the protection diode. A method includes forming the anode of the protection diode; forming a cathode of the protection diode to surround the anode; forming a collector of the first transistor to surround about a half of the anode within a region surrounded by the cathode; forming a collector of the second transistor to surround about another half of the anode; and forming the bases of the first and second transistors as a common base substantially parallel to an edge of the collectors of the first and second transistors.


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