The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
Feb. 27, 2004
Ciaran Avram Fox, Sunnyvale, CA (US);
Hardayal Singh Gill, Palo Alto, CA (US);
Prakash Kasiraj, San Jose, CA (US);
Wen-yaung Lee, San Jose, CA (US);
Mustafa Michael Pinarbasi, Morgan Hill, CA (US);
Ciaran Avram Fox, Sunnyvale, CA (US);
Hardayal Singh Gill, Palo Alto, CA (US);
Prakash Kasiraj, San Jose, CA (US);
Wen-Yaung Lee, San Jose, CA (US);
Mustafa Michael Pinarbasi, Morgan Hill, CA (US);
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
A spin valve (SV) sensor of the self-pinned type includes one or more compressive stress modification layers for reducing the likelihood that the pinning field will flip its direction. The spin valve sensor includes a capping layer formed over a spin valve structure which includes a free layer, an antiparallel (AP) self-pinned layer structure, and a spacer layer in between the free layer and the AP self-pinned layer structure. A compressive stress modification layer is formed above or below the capping layer, adjacent the AP self-pinned layer structure, or both. Preferably, the compressive stress modification layer is made of ruthenium (Ru) or other suitable material.