The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
Mar. 07, 2005
Mitsuhiro Suzuki, Ibaraki, JP;
Minoru Morinaga, Takatsuki, JP;
Yukihiro Inoue, Neyagawa, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A drain diffusion layerincludes a low impurity concentration regionand a high impurity concentration region, and the low impurity concentration regionis located on the channel region side. An impurity layerhaving an opposite conductivity type to the drain diffusion layeris formed in the channel region, at a position away from the low impurity concentration regionby a distance T. Alternatively, the low impurity concentration regionand the impurity layerare located so as to contact each other. Still alternatively, a border impurity layer is provided between the low impurity concentration regionand the impurity layer. Thus, a semiconductor device including a high voltage transistor capable of suppressing the reduction of the electric current driving capability and performing stable driving, and a method for fabricating the same, can be provided.