The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
Apr. 22, 2005
Noriyuki Kodama, Kanagawa, JP;
Koichi Sawahata, Kanagawa, JP;
Morihisa Hirata, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
In a semiconductor device having an electrostatic discharge protection arrangement, a semiconductor substrate exhibits a first conductivity type. First and second impurity regions each exhibiting a second conductivity type are formed in the semiconductor substrate. A channel region is formed in the semiconductor substrate between the first and second impurity regions. A first conductive area is defined on the first impurity region in the vicinity of the channel region. A second conductive area is defined on the first impurity region so as to be supplied with an electrostatic discharge current. A third conductive area is defined on the first impurity region to establish an electrical connection between the first and second conductive area. At least one heat-radiation area is defined in the third conductive area so as to be at least partially isolated therefrom and thermally contacted with the first conductive area.