The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
Sep. 29, 2003
Nicholas I. Buchan, San Jose, CA (US);
Timothy C. Reiley, Cupertino, CA (US);
Nicholas I. Buchan, San Jose, CA (US);
Timothy C. Reiley, Cupertino, CA (US);
Hitachi Global Storage Technologies Netherlands, B.V., Amsterdam, NL;
Abstract
A method for fabricating recording head sliders made from silicon substrates, is described. A Silicon wafer with a SiOovercoat is provided, and a layer of material which is resistant to Deep Reactive Ion Etching (DRIE) is deposited on the SiOovercoat. A patterned layer of material which is resistant to Reactive Ion Etching (RIE) is deposited on the layer of DRIE-resistant material to form a primary mask. RIE is used through the primary mask to pattern the SiOovercoat layer and the layer of DRIE-resistant material. The primary mask is then removing to expose the layer of DRIE-resistant material which has now been patterned to form a secondary mask. DRIE is then used through the secondary mask to cut the Si wafer into pieces. Finally, the secondary mask is removed.