The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
Dec. 14, 2004
Jin-taek Park, Gyeonggi-do, KR;
Jung-dal Choi, Gyeonggi-do, KR;
Jung-young Lee, Gyeonggi-do, KR;
Hyun-suk Kim, Gyeonggi-do, KR;
Jin-Taek Park, Gyeonggi-do, KR;
Jung-Dal Choi, Gyeonggi-do, KR;
Jung-Young Lee, Gyeonggi-do, KR;
Hyun-Suk Kim, Gyeonggi-do, KR;
Abstract
Methods of fabricating semiconductor devices are provided. Transistors are provided on a semiconductor substrate. A first interlayer insulating layer is provided on the transistors. A second interlayer insulating layer is provided on the first interlayer insulating layer. The second interlayer insulating layer defines a trench such that at least a portion of an upper surface of the first interlayer insulating layer is exposed. A resistor pattern is provided in the trench such that the at least a portion of the resistor pattern contacts the exposed portion of the first interlayer insulating layer. Related methods are also provided.