The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
Jul. 02, 2004
Giuseppe D'arrigo, Sant'Agata Li Battiati, IT;
Rosario Corrado Spinella, Catania, IT;
Giuseppe D'Arrigo, Sant'Agata Li Battiati, IT;
Rosario Corrado Spinella, Catania, IT;
STMicroelectronics, S.r.L., Agrate Brianza, IT;
Abstract
A method is provided for fabricating a semiconductor device that includes a suspended micro-system. According to the method, a silicon porous layer is formed above a silicon substrate, and the silicon porous layer is oxidized. An oxide layer is deposited, and a first polysilicon layer is deposited above the oxide layer. The first polysilicon layer, the oxide layer, and the silicon porous layer are selectively removed. A nitride layer is deposited, and a second polysilicon layer is deposited. The second polysilicon layer, the nitride layer, the first polysilicon layer, and the oxide layer are selectively removed. The silicon porous layer is removed in areas made accessible by the previous step. Also provided is a semiconductor device that includes a suspended structure fixed to at least two walls through a plurality of hinges, with the suspended structure including an oxide layer, a first polysilicon layer, a nitride layer, and a second polysilicon layer.